Always Learning

Solid State Electronic Devices, 6/E
Ben Streetman, University of Texas, Austin
Sanjay Banerjee, University of Texas at Austin

ISBN-10: 013149726X
ISBN-13:  9780131497269

Publisher:  Prentice Hall
Copyright:  2006
Format:  Cloth; 608 pp
Published:  07/26/2005
Status: Instock


Customers outside the U.S., click here.


Print this content

In this section:


Description

For undergraduate electrical engineering students or for practicing engineers and scientists, interested in updating their understanding of modern electronics.

 

One of the most widely used introductory books on semiconductor materials, physics, devices and technology, this text aims to: 1) develop basic semiconductor physics concepts, so students can better understand current and future devices; and 2) provide a sound understanding of current semiconductor devices and technology, so that their applications to electronic and optoelectronic circuits and systems can be appreciated. Students are brought to a level of understanding that will enable them to read much of the current literature on new devices and applications.


Features

* The basics of semiconductor materials and conduction processes in solids – Incorporated to help students understand p-n junctions, bipolar and metal oxide semiconductor transistors, optoelectronic and other devices. 

* Extensive discussion of circuit and other application examples to provide students with feedback about the practical relevance of the theory.  

* Key equations for semiconductor devices – Listed on the inside covers of the book, arranged thematically to help students digest concepts.  

* Provides a summary of key concepts at end of each chapter,and chapter objectives at the beginning 

* Approximately 200 problems along with current references that extend concepts in the text.


New To This Edition

50% New or Revised Homework Problems.

Summary of key concepts at end of each chapter.

Answers to Selected Problems in the back of the book.

Updated discussion of device fabrication processes and CMOS integrated circuit technology provides a useful understanding of how semiconductor devices are made.

Discussion of advanced MOS and bipolar processes and structures such as high-k gate dielectrics, polyemitter BJTs and graded SiGe base HBTs.  

Consolidated treatment of optoelectronic devices — Discusses sources such as white LEDs for illumination, detectors such as SACM and waveguide photodiodes, and advances in solar cells.


Table of Contents

1       CRYSTAL PROPERTIES AND GROWTH OF SEMICONDUCTORS. 

Semiconductor Materials. Periodic Structures. Crystal Lattices. Cubic Lattices. Planes and Directions. The Diamond Lattice. Bulk Crystal Growth. Starting Materials. Growth of Single Crystal Ingots. Wafers. Doping. Epitaxial Growth. Lattice Matching in Epitaxial Growth. Vapor-Phase Epitaxy. Molecular Beam Epitaxy.

 

2     ATOMS AND ELECTRONS.

Introduction to Physical Models. Experimental Observations. The Photoelectric Effect. Atomic Spectra. The Bohr Model. Quantum Mechanics. Probability and the Uncertainty Principle. The Schrdinger Wave Equation. Potential Well Problem.     Tunneling. Atomic Structure and the Periodic Table. The Hydrogen Atom. The Periodic Table.

 

3     ENERGY BANDS AND CHARGE CARRIERS IN SEMICONDUCTORS.

Bonding Forces and Energy Bands in Solids. Bonding Forces in Solids. Energy Bands. Metals, Semiconductors, and Insulators. Direct and Indirect Semiconductors. Variation of Energy Bands with Alloy Composition. Charge Carriers in Semiconductors. Electrons and Holes. Effective Mass. Intrinsic Material. Extrinsic Material. Electrons and Holes in Quantum Wells. Carrier Concentrations. The Fermi Level. Electron and Hole Concentrations at Equilibrium. Temperature Dependence of Carrier Concentrations. Compensation and Space Charge Neutrality. Drift of Carriers in Electric and Magnetic Fields. Conductivity and Mobility. Drift and Resistance. EFFECTS OF TEMPERATURE AND DOPING ON MOBILITY. High-Field Effects. The Hall Effect. Invariance of the Fermi Level at Equilibrium.

 

4     EXCESS CARRIERS IN SEMICONDUCTORS.

Optical Absorption. Luminescence. Photoluminescence. Electroluminescence. Carrier Lifetime and Photoconductivity. Direct Recombination of Electrons and Holes. Indirect Recombination; Trapping. Steady State Carrier Generation; Quasi-Fermi Levels. Photoconductive Devices. Diffusion of Carriers. Diffusion Processes. Diffusion and Drift of Carriers; Built-in Fields. Diffusion and Recombination; The Continuity Equation. Steady State Carrier Injection; Diffusion Length. The Haynes-Shockley Experiment. Gradients in the Quasi-Fermi Levels.

 

5     JUNCTIONS.

Fabrication of p-n Junctions. Thermal Oxidation. Diffusion. Rapid Thermal Processing. Ion Implantation. Chemical Vapor Deposition (CVD). Photolithography. Etching. Metallization. Equilibrium Conditions. The Contact Potential. Equilibrium Fermi Levels. Space Charge at a Junction. Forward- and Reverse-Biased Junctions; Steady State Conditions. Qualitative Description of Current Flow at a Junction. Carrier Injection. Reverse Bias. Reverse-Bias Breakdown. Zener Breakdown. Avalanche Breakdown. Rectifiers. The Breakdown Diode. Transient and A-C Conditions. Time Variation of Stored Charge. Reverse Recovery Transient. Switching Diodes. Capacitance of p-n Junctions. The Varactor Diode. Deviations from the Simple Theory. Effects of Contact Potential on Carrier Injection. Recombination and Generation in the Transition Region. Ohmic Losses. GRADED JUNCTIONS. Metal-Semiconductor Junctions. Schottky Barriers. Rectifying Contacts. Ohmic Contacts. Typical Schottky Barriers. Heterojunctions.

 

6     FIELD-EFFECT TRANSISTORS.

Transistor Operation. The Load Line. Amplification and Switching. The Junction FET. Pinch-off and Saturation. Gate Control. Current-Voltage Characteristics. The Metal-Semiconductor FET. The GaAs MESFET. The High Electron Mobility Transistor (HEMT). Short Channel Effects. The Metal-Insulator-Semiconductor FET. Basic Operation and Fabrication. The Ideal MOS Capacitor. Effects of Real Surfaces. Threshold Voltage. MOS Capacitance-Voltage Analysis. Time-dependent Capacitance Measurements. Current-Voltage Characteristics of MOS Gate Oxides. The MOS Field-Effect Transistor. Output Characteristics. Transfer Characteristics. Mobility Models. Short Channel MOSFET I-V Characteristics. Control of Threshold Voltage. Substrate Bias Effects. Subthreshold Characteristics. Equivalent Circuit for the MOSFET. MOSFET Scaling and Hot Electron Effects. Drain-Induced Barrier Lowering. Short Channel and Narrow Width Effect. Gate-Induced Drain Leakage.

 

7     BIPOLAR JUNCTION TRANSISTORS.

Fundamentals of BJT Operation. Amplification with BJTs. BJT Fabrication. Minority Carrier Distributions and Terminal Currents. Solution of the Diffusion Equation in the Base Region. Evaluation of the Terminal Currents. Approximations of the Terminal Currents. Current Transfer Ratio. Generalized Biasing. The Coupled-Diode Model. Charge Control Analysis. Switching. Cutoff. Saturation. The Switching Cycle. Specifications for Switching Transistors. Other Important Effects. Drift in the Base Region. Base Narrowing. Avalanche Breakdown. Injection Level; Thermal Effects. Base Resistance and Emitter Crowding. Gummel-Poon Model. Kirk Effect. Frequency Limitations of Transistors. Capacitance and Charging Times. Transit Time Effects. Webster Effect. High-Frequency Transistors. Heterojunction Bipolar Transistors.

 

8     OPTOELECTRONIC DEVICES.

Photodiodes. Current and Voltage in an Illuminated Junction. Solar Cells. Photodetectors. Noise and Bandwidth of Photodetectors. Light-Emitting Diodes. Light-Emitting Materials. Fiber Optic Communications. Multilayer Heterojunctions for LEDs. Lasers. Semiconductor Lasers. Population Inversion at a Junction. Emission Spectra for p-n Junction Lasers. The Basic Semiconductor Laser. Heterojunction Lasers. Materials for Semiconductor Lasers.

 

9     INTEGRATED CIRCUITS.

Background. Advantages of Integration. Types of Integrated Circuits. Monolithic and Hybrid Circuits. Evolution of Integrated Circuits. Monolithic Device Elements. CMOS Process Integration. Silicon-on-Insulator (SOI). Integration of Other Circuit Elements. Charge Transfer Devices. Dynamic Effects in MOS Capacitors. The Basic CCD. Improvements on the Basic Structure. Applications of CCDs. Ultra Large-Scale Integration (ULSI). Logic Devices. Semiconductor Memories. Testing, Bonding, and Packaging. Testing. Wire Bonding. Flip-Chip Techniques. Packaging.

 

10. HIGH FREQUENCY AND HIGH POWER DEVICES.

Tunnel Diodes: Degenerate Semiconductors. Tunnel diode Operation. Circuit Applications. Transit Time Devices: The IMPATT Diode. Gunn Effect and Related Devices: Transferred Electron Mechanism. Formation and Drift of Space Charge Domains. Fabrication. The p-n-p-n Diode: Basic Structure. Two-Transistor Analogy.     Variation of α with Injection. Forward-Blocking State. Conducting State. Triggering Mechanisms.     Semiconductor Controlled Rectifier: Gate Control. Turning off the SCR. Bilateral Devices. Fabrication and Applications. Insulated Gate Bipolar Transistor.   

 

APPENDICES.

Definitions of Commonly Used Symbols. Physical Constants and Conversion Factors. Properties of Semiconductor Materials. Derivation of the Density of States in the Conduction Band. Derivation of Fermi-Dirac Statistics. Dry and Wet Thermal Oxide Thickness as a Function of Time

and Temperature. Solid Solubilities of Impurities in Si. Diffusivities of Dopants in Si and SiO2. Projected Range and Straggle as a Function of Implant Energy in Si. 

 

INDEX.

 



Back to top

Print this content

In this section:

Back to top

Print this content

In this section:


Websites and Online Courses

Companion Website for Solid State Electronic Devices, 6/E
Streetman
©2006  |  Prentice Hall  |  Website  |  Live
ISBN-10: 0131874381  |  ISBN-13: 9780131874381
More Info

Back to top

Print this content

In this section:

Instructor's Solutions Manual (catalog download), 6/E
Streetman & Banerjee
©2006  |  Prentice Hall  |  On-line Supplement; 300 pp  |  Live
ISBN-10: 0131497278  |  ISBN-13: 9780131497276

Show Downloadable Files
 | More Info

Back to top

Companion Website for Solid State Electronic Devices, 6/E
Streetman
©2006  |  Prentice Hall  |  Website  |  Live
ISBN-10: 0131874381  |  ISBN-13: 9780131874381
More Info

Back to top


Websites and online courses

Companion Website for Solid State Electronic Devices, 6/E
Streetman
©2006  |  Prentice Hall  |  Website  |  Live
ISBN-10: 0131874381  |  ISBN-13: 9780131874381
More Info


Websites and Online Courses

Companion Website for Solid State Electronic Devices, 6/E
Streetman
©2006  |  Prentice Hall  |  Website  |  Live
ISBN-10: 0131874381  |  ISBN-13: 9780131874381
More Info

Log in to the Instructor Resource Center

Login name: 

  Password: 

Forgot login/password?  |  Need to redeem an access code?

        

Instructor Resource Center File Download

This work is protected by local and international copyright laws and is provided solely for the use of instructors in teaching their courses and assessing student learning. Dissemination or sale of any part of this work (including on the World Wide Web) will destroy the integrity of the work and is not permitted. The work and materials from this site should never be made available to students except by instructors using the accompanying text in their classes. All recipients of this work are expected to abide by these restrictions and to honor the intended pedagogical purposes and the needs of other instructors who rely on these materials.

Cancel     I accept, proceed with download

Print this content

Pearson Higher Education offers special pricing when you choose to package your text with other student resources. If you're interested in creating a cost-saving package for your students contact your Pearson Higher Education representative.

Back to top